OPTICAL CONDUCTIVITY OF ONE-DIMENSIONAL NARROW-GAP SEMICONDUCTORS

نویسندگان

چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications

Advances in the growth, analysis, and characterization of various narrow-gap semiconductors and low-dimensional opto-electronic device structures have brought revolution into the modern day's information and communication technology including optical communication and computing systems. The main objective of this special issue is to include the recent advances in the experimental and theoretica...

متن کامل

Computational Studies of Compressed Diborane and Engineered Narrow-Gap Semiconductors

The research contained in this thesis is two-fold: understanding the behavior of dib-orane under pressure, and engineering wide-gap semiconductors in order to promotetheir optical e ciency. Each of these themes are further explained below.Diborane (B2H6), is a prototypical electron-deficient molecule and has received a greatdeal of attention in recent years due to its unique and...

متن کامل

Universal subgap optical conductivity in quasi-one-dimensional Peierls systems.

Quasi-one-dimensional Peierls systems with quantum and thermal lattice fluctuations can be modeled by a Dirac-type equation with a Gaussiancorrelated off-diagonal disorder. A powerful new method gives the exact disorder-averaged Green function used to compute the optical conductivity. The strong subgap tail of the conductivity has a universal scaling form. The frequency and temperature dependen...

متن کامل

Inter-band Tunnel Transistor Architecture using Narrow Gap Semiconductors

The inter-band tunnel transistor (TFET) architecture features a subkT/q sub-threshold slope operation and can potentially support high ION/IOFF ratios over small gate voltages. Based on twodimensional numerical simulations, we investigate TFET in various material systems ranging from silicon to indium arsenide. TFET performance can be enhanced when heterojunctions are employed at the source sid...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of Modern Physics B

سال: 2002

ISSN: 0217-9792,1793-6578

DOI: 10.1142/s0217979202010361